Proton Degradation of Light-Emitting Diodes
نویسندگان
چکیده
Proton degradation was investigated for several types of light-emitting diodes with wavelengths in the near infrared region. All irradiations were done with 50-MeV protons. Several basic light-emitting diode (LED) technologies were compared, including homojunction and double-heterojunction devices. Homojunction LEDs fabricated with amphoteric dopants were far more sensitive to displacement damage than double-heterojunction LEDs, and were strongly affected by injection-enhanced annealing. Unit-to-unit variability remains an important issue for all LED technologies. For some technologies, degradation of the forward voltage characteristics appears to be more significant than degradation of light output.
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